GaNF2 is a fluoride-containing gallium nitride-based ceramic compound that belongs to the class of wide-bandgap semiconductors and functional ceramics. This material is primarily of research and emerging technology interest, developed for applications requiring the combined properties of gallium nitride's semiconductor characteristics with enhanced thermal, chemical, or dielectric properties from fluoride incorporation. Potential applications span next-generation high-temperature electronics, advanced RF/microwave devices, and specialized optical components where improved performance over conventional GaN or enhanced thermal stability is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 106.9 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 66.25 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.996 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 1.977 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 3.575 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 23.50 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.193 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7144 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data