GaNF2 is a fluoride-containing gallium nitride-based ceramic compound that belongs to the class of wide-bandgap semiconductors and functional ceramics. This material is primarily of research and emerging technology interest, developed for applications requiring the combined properties of gallium nitride's semiconductor characteristics with enhanced thermal, chemical, or dielectric properties from fluoride incorporation. Potential applications span next-generation high-temperature electronics, advanced RF/microwave devices, and specialized optical components where improved performance over conventional GaN or enhanced thermal stability is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,498.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 9,608.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1805 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9885 range 0.000–1.977median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.193 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7144 | eV/atom | — |