GaNbO3

semiconductor
· GaNbO3

GaNbO3 is a mixed-metal oxide semiconductor compound combining gallium and niobium in an ordered perovskite or pyrochlore crystal structure. This material remains primarily in the research and development phase, investigated for its potential in optoelectronic devices, photocatalysis, and high-temperature applications where its wide bandgap and thermal stability could offer advantages over conventional semiconductors. Engineers encounter GaNbO3 in emerging device research rather than mature production, where it is being explored as an alternative to GaN or other compound semiconductors for specialized applications requiring enhanced chemical resistance or tunable electronic properties.

photocatalytic water splittingUV photodetectorshigh-temperature electronics researchoptoelectronic device developmentadvanced ceramic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.