GaNbO3 is a mixed-metal oxide semiconductor compound combining gallium and niobium in an ordered perovskite or pyrochlore crystal structure. This material remains primarily in the research and development phase, investigated for its potential in optoelectronic devices, photocatalysis, and high-temperature applications where its wide bandgap and thermal stability could offer advantages over conventional semiconductors. Engineers encounter GaNbO3 in emerging device research rather than mature production, where it is being explored as an alternative to GaN or other compound semiconductors for specialized applications requiring enhanced chemical resistance or tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2960 | eV | — | ||
| ↳ | 1.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | -0.00000476 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.186 | eV/atom | — | ||
| ↳ | 0.08000 | eV/atom | — |