GaNaO3 — Properties & Data | MatWorld

GaNaO3

semiconductor

· GaNaO3

GaNaO3 is an experimental gallium sodium oxide compound, belonging to the family of mixed-metal oxides that are the focus of semiconductor and photonic material research. This material is primarily investigated in academic and laboratory settings for potential applications in optoelectronic devices, photocatalysis, and wide-bandgap semiconductor technologies, where gallium-based oxides offer advantages in UV sensitivity and chemical stability compared to conventional semiconductors.

photocatalytic applicationsUV photodetectorsexperimental semiconductorswide-bandgap devicesphotonic research materialschemical sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.633	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	3.999	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-1.390	eV/atom	DFT
↳	2.060	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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GaNaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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