GaNaO3

semiconductor

· GaNaO3

GaNaO3 is an experimental gallium sodium oxide compound, belonging to the family of mixed-metal oxides that are the focus of semiconductor and photonic material research. This material is primarily investigated in academic and laboratory settings for potential applications in optoelectronic devices, photocatalysis, and wide-bandgap semiconductor technologies, where gallium-based oxides offer advantages in UV sensitivity and chemical stability compared to conventional semiconductors.

photocatalytic applicationsUV photodetectorsexperimental semiconductorswide-bandgap devicesphotonic research materialschemical sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.633	eV	—
↳	0.000	eV	—
Magnetic Moment(μB)	3.999	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-1.390	eV/atom	—
↳	2.060	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNaO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control