Gallium Nitride (GaN) is a wide-bandgap semiconductor compound composed of gallium and nitrogen, belonging to the III-V nitride family of materials. It is the dominant material for high-brightness blue and ultraviolet LEDs, RF power amplifiers, and next-generation power electronics converters, where its wide bandgap enables high operating temperatures, high switching frequencies, and superior energy efficiency compared to silicon-based alternatives. Engineers select GaN for applications demanding high power density, fast switching performance, and thermal stability in compact form factors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 181.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 2,773 | K | — | ||
Specific Heat Capacity(Cp) | 490 | J/(kg·K) | — | ||
Thermal Conductivity(k) | 130 | W/(m·K) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000559 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.150 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.400 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.900 | - | — |