Gallium Nitride (GaN) is a wide-bandgap semiconductor compound composed of gallium and nitrogen, belonging to the III-V nitride family of materials. It is the dominant material for high-brightness blue and ultraviolet LEDs, RF power amplifiers, and next-generation power electronics converters, where its wide bandgap enables high operating temperatures, high switching frequencies, and superior energy efficiency compared to silicon-based alternatives. Engineers select GaN for applications demanding high power density, fast switching performance, and thermal stability in compact form factors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 26,251.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 4,531.4 | °F | — | ||
Specific Heat Capacity(Cp) | 0.1170 | BTU/(lb·°F) | — | ||
Thermal Conductivity(k) | 75.11 | BTU/(hr·ft·°F) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 3.106 | µin/in·°F | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2222 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.400 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.900 | - | — |