Gallium Nitride (GaN) — Properties & Data | MatWorld

Gallium Nitride (GaN)

Name: Gallium Nitride (GaN)
Brand: MatWorld

Verifiedsemiconductor

· GaN· Gallium Nitride

Gallium Nitride (GaN) is a wide-bandgap semiconductor compound composed of gallium and nitrogen, belonging to the III-V nitride family of materials. It is the dominant material for high-brightness blue and ultraviolet LEDs, RF power amplifiers, and next-generation power electronics converters, where its wide bandgap enables high operating temperatures, high switching frequencies, and superior energy efficiency compared to silicon-based alternatives. Engineers select GaN for applications demanding high power density, fast switching performance, and thermal stability in compact form factors.

high-power RF amplifiersLED and optoelectronicspower conversion and switchingmilitary and aerospace electronicsfast-charging power supplieshigh-temperature electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property OverviewNormalized to typical max values

Property	Value	Unit	Conditions	Source
Young's Modulus(E)	26,251.8	ksi	—

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1 interactive curve for this material

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Method

Property	Value	Unit	Conditions
Melting Point / Solidus(Tm)	4,531.4	°F	—
Specific Heat Capacity(Cp)	0.1170	BTU/(lb·°F)	—
Thermal Conductivity(k)2 entries	104.6	BTU/(hr·ft·°F)	Measured
↳	75.11	BTU/(hr·ft·°F)	—
Thermal Conductivity vs Temperature(k(T))	Curve (28 pts)	BTU/(hr·ft·°F)	Measured · bulk crystal (ammonothermal)
Coefficient of Thermal Expansion(α (CTE))	3.106	µin/in·°F	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	0.2222	lb/in³	—

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	3.250	eV	Measured
↳	1.943	eV	DFT · OptB88vdW
↳	3.084	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	8.900	-	—
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	5.880	-	DFT · OptB88vdW
↳	4.516	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.1900	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.647	me	DFT · OptB88vdW · 27°C
Thermoelectric Power Factor(PF)2 entries	0.000390	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00184	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-59.89	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	320.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	3.710	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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2 interactive curves for this material

Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.

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Property	Value	Unit	Conditions	Source
Refractive Index vs Wavelength(n(λ))2 entries	Curve (101 pts)	-	Measured · ordinary ray · 27°C
↳	Curve (101 pts)	-	Measured · extraordinary ray · 27°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5680	eV/atom	Measured

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Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Gallium Nitride (GaN)

Mechanical Properties

Thermal Properties

Physical Properties

Electrical Properties

Optical Properties

Other Properties

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