GaLaON2

ceramic

· GaLaON2

GaLaON2 is an oxynitride ceramic compound containing gallium, lanthanum, oxygen, and nitrogen—a materials class designed to bridge properties between oxides and nitrides. This compound is primarily of research interest for applications requiring thermal stability, chemical inertness, and potential wide-bandgap semiconductor behavior; it represents the broader oxynitride family's potential to achieve properties unattainable in conventional oxide or nitride ceramics alone.

high-temperature ceramicswide-bandgap semiconductorsthermal barrier coatingsrefractory applicationsresearch and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.4419	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaLaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental