GaLaON2 is an oxynitride ceramic compound containing gallium, lanthanum, oxygen, and nitrogen—a materials class designed to bridge properties between oxides and nitrides. This compound is primarily of research interest for applications requiring thermal stability, chemical inertness, and potential wide-bandgap semiconductor behavior; it represents the broader oxynitride family's potential to achieve properties unattainable in conventional oxide or nitride ceramics alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.4419 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.060 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data