GaGeTe — Properties & Data | MatWorld

GaGeTe

Name: GaGeTe
Brand: MatWorld

semiconductor

· GaGeTe

GaGeTe is a ternary III-IV-VI semiconductor compound composed of gallium, germanium, and tellurium. This material is primarily of research interest rather than established industrial production, belonging to the family of layered semiconductors that show promise for optoelectronic and thermoelectric applications. The compound is notable for its potential in next-generation photonic devices, thermal management systems, and two-dimensional material research, where its layered crystal structure and tunable band gap make it an alternative to more conventional binary semiconductors for specialized applications requiring weak interlayer bonding or enhanced anisotropic properties.

Optoelectronic devices (research)Thermoelectric materialsTwo-dimensional materialsPhotonic integrated circuits (exploratory)Infrared detectorsExfoliation studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Exfoliation Energy(Eexf)	45.93	meV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.209	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.100	eV	Measured
↳	0.05300	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	20.47	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00328	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000767	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-157.4	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	86.16	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000700	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2328	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaGeTe

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