GaGeTe is a ternary III-IV-VI semiconductor compound composed of gallium, germanium, and tellurium. This material is primarily of research interest rather than established industrial production, belonging to the family of layered semiconductors that show promise for optoelectronic and thermoelectric applications. The compound is notable for its potential in next-generation photonic devices, thermal management systems, and two-dimensional material research, where its layered crystal structure and tunable band gap make it an alternative to more conventional binary semiconductors for specialized applications requiring weak interlayer bonding or enhanced anisotropic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 45.93 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1882 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.100 | eV | — | ||
| ↳ | 0.05300 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 20.47 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -157.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000700 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2328 | eV/atom | — |