Gallium chloride (GaCl3) is an inorganic salt compound classified as a ceramic material, consisting of gallium and chlorine ions. It functions primarily as a chemical precursor and dopant material in semiconductor and optoelectronic device fabrication, particularly in metal-organic chemical vapor deposition (MOCVD) processes for gallium nitride (GaN) and gallium arsenide (GaAs) growth. Engineers select GaCl3 for its high purity availability and effectiveness as a gallium source in controlled synthesis environments, though it requires careful handling due to its hygroscopic nature and corrosive properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10.16 | GPa | — | ||
Shear Modulus(G) | 4.710 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.553 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.920 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 4.976 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -154.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.360 | eV/atom | — | ||
| ↳ | -1.075 | eV/atom | — |