GaBiO3
semiconductor· GaBiO3
GaBiO3 is a bismuth-containing gallium oxide compound belonging to the wide-bandgap semiconductor family, representing an emerging material in the oxide semiconductor research space. While not yet widely commercialized, this material is being investigated for its potential in high-temperature electronics, power devices, and optoelectronic applications where the combination of gallium and bismuth oxides may offer advantages in thermal stability and electrical properties compared to conventional semiconductors. Engineers would consider this material primarily in research and development contexts aimed at next-generation power electronics and high-frequency applications in demanding thermal environments.
wide-bandgap semiconductor researchhigh-temperature power electronicsexperimental optoelectronicsadvanced semiconductor devicesthermal management applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.1 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 95.38 | GPa | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.224 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.600 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 1.352 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.12 | - | — | ||
Magnetic Moment(μB)2 entries | -0.01579 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 3.051 | C/m² | — | ||
| ↳ | 0.000 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -133.4 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1796 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.645 | eV/atom | — | ||
| ↳ | 1.080 | eV/atom | — | ||
| ↳ | -1.506 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.