GaBiO3 is a bismuth-containing gallium oxide compound belonging to the wide-bandgap semiconductor family, representing an emerging material in the oxide semiconductor research space. While not yet widely commercialized, this material is being investigated for its potential in high-temperature electronics, power devices, and optoelectronic applications where the combination of gallium and bismuth oxides may offer advantages in thermal stability and electrical properties compared to conventional semiconductors. Engineers would consider this material primarily in research and development contexts aimed at next-generation power electronics and high-frequency applications in demanding thermal environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.1 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 95.38 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.224 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.600 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 1.352 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.12 | - | — | ||
Magnetic Moment(μB)2 entries | -0.01579 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 3.051 | C/m² | — | ||
| ↳ | 0.000 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -133.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1796 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.645 | eV/atom | — | ||
| ↳ | 1.080 | eV/atom | — | ||
| ↳ | -1.506 | eV/atom | — |