GaBiO3 — Properties & Data | MatWorld

GaBiO3

semiconductor

· GaBiO3

GaBiO3 is a bismuth-containing gallium oxide compound belonging to the wide-bandgap semiconductor family, representing an emerging material in the oxide semiconductor research space. While not yet widely commercialized, this material is being investigated for its potential in high-temperature electronics, power devices, and optoelectronic applications where the combination of gallium and bismuth oxides may offer advantages in thermal stability and electrical properties compared to conventional semiconductors. Engineers would consider this material primarily in research and development contexts aimed at next-generation power electronics and high-frequency applications in demanding thermal environments.

wide-bandgap semiconductor researchhigh-temperature power electronicsexperimental optoelectronicsadvanced semiconductor devicesthermal management applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	26,407	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)	13,833.7	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.3332	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.600	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
↳	2.133	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	10.12	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	5.373	-	DFT · OptB88vdW
Magnetic Moment(μB)2 entries	-0.01579	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.000	C/m²	DFT · OptB88vdW
↳	3.051	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000581	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00133	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-86.23	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	330.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.1796	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)3 entries	-1.645	eV/atom	DFT
↳	1.080	eV/atom	DFT
↳	-1.506	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBiO3

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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Environmental

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