GaAsPd5 — Properties & Data | MatWorld

GaAsPd5

ceramic

· JVASP-35502· GaAsPd5

GaAsPd5 is an intermetallic ceramic compound combining gallium arsenide (a III-V semiconductor) with palladium, classified as a ceramic despite its metallic component. This is a research-phase material rather than a production commodity; it represents exploration of hybrid semiconductor-metal systems that may combine electronic properties of GaAs with the mechanical and catalytic characteristics of palladium-rich phases. Such materials are investigated for specialized applications requiring coupled electrical, thermal, or catalytic performance in extreme environments, though industrial adoption remains limited and material behavior under service conditions requires further characterization.

Experimental semiconductorsHigh-temperature contactsCatalytic surfacesResearch optoelectronicsHybrid electronic devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	155.1	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3300	-	DFT · OptB88vdW
Shear Modulus(G)	59.30	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	10.13	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.0000951	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000145	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	5.353	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	7.347	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4397	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsPd5

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental