GaAsPd5 is an intermetallic ceramic compound combining gallium arsenide (a III-V semiconductor) with palladium, classified as a ceramic despite its metallic component. This is a research-phase material rather than a production commodity; it represents exploration of hybrid semiconductor-metal systems that may combine electronic properties of GaAs with the mechanical and catalytic characteristics of palladium-rich phases. Such materials are investigated for specialized applications requiring coupled electrical, thermal, or catalytic performance in extreme environments, though industrial adoption remains limited and material behavior under service conditions requires further characterization.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,491 | ksi | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 8,600.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3660 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 5.353 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4397 | eV/atom | — |