Ga6 N2 O6
semiconductor· Ga6 N2 O6
Ga₆N₂O₆ is a gallium oxynitride compound, representing a mixed-anion semiconductor that combines gallium nitride (GaN) characteristics with oxide components. This is primarily a research-phase material under investigation for wide-bandgap semiconductor applications, where the incorporation of oxygen into the GaN lattice may enable tuning of electronic and optical properties beyond conventional binary nitrides. Interest focuses on power electronics, optoelectronic devices, and high-temperature applications where engineered bandgap and carrier mobility are critical, though the material remains largely in development stages with limited industrial deployment.
wide-bandgap semiconductors (research)power electronics (developmental)high-temperature devicesoptoelectronic components (exploratory)compound semiconductor engineeringgallium-based materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.