Ga3 Ta1
semiconductorGa₃Ta₁ is an intermetallic compound composed of gallium and tantalum, belonging to the semiconductor material class with potential applications in advanced electronic and photonic devices. This compound represents a research-stage material within the gallium-tantalum system; intermetallic semiconductors of this type are investigated for their unique electronic band structures and potential use in high-temperature or high-frequency applications where conventional III-V semiconductors may be limited. Engineers would consider gallium-tantalum intermetallics for specialized optoelectronic and power electronics applications where the combination of gallium's semiconductor properties and tantalum's refractory characteristics could offer advantages in thermal stability or frequency response.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |