Ga₃Ta₁ is an intermetallic compound composed of gallium and tantalum, belonging to the semiconductor material class with potential applications in advanced electronic and photonic devices. This compound represents a research-stage material within the gallium-tantalum system; intermetallic semiconductors of this type are investigated for their unique electronic band structures and potential use in high-temperature or high-frequency applications where conventional III-V semiconductors may be limited. Engineers would consider gallium-tantalum intermetallics for specialized optoelectronic and power electronics applications where the combination of gallium's semiconductor properties and tantalum's refractory characteristics could offer advantages in thermal stability or frequency response.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,963.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,868.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1190 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data