Ga2Sn3N4

ceramic

· JVASP-122241· Ga2Sn3N4

Ga₂Sn₃N₄ is a ternary nitride ceramic combining gallium, tin, and nitrogen—a research compound within the broader family of III-V and IV-V nitride semiconductors. This material remains largely experimental and is primarily investigated for potential optoelectronic and wide-bandgap semiconductor applications where its unique phase stability and electronic properties may offer advantages over binary nitrides like GaN or AlN.

wide-bandgap semiconductors (research)high-temperature electronics (developmental)optoelectronic devices (experimental)compound semiconductor researchpower electronics prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.679	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3960	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1996	eV/atom	—
Formation Energy(ΔHf)	-0.05763	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2Sn3N4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental