Ga2Sn3N4
ceramic· JVASP-122241· Ga2Sn3N4
Ga₂Sn₃N₄ is a ternary nitride ceramic combining gallium, tin, and nitrogen—a research compound within the broader family of III-V and IV-V nitride semiconductors. This material remains largely experimental and is primarily investigated for potential optoelectronic and wide-bandgap semiconductor applications where its unique phase stability and electronic properties may offer advantages over binary nitrides like GaN or AlN.
wide-bandgap semiconductors (research)high-temperature electronics (developmental)optoelectronic devices (experimental)compound semiconductor researchpower electronics prototyping
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2052 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3960 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1996 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05763 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.