Gallium sulfide (Ga₂S₃) is a III–VI compound semiconductor belonging to the gallium chalcogenide family, characterized by a direct bandgap suitable for optoelectronic applications. While not yet widely deployed in commercial products, Ga₂S₃ is actively studied for infrared photonics, scintillation detection, and nonlinear optical devices because its bandgap and transparency window position it between more common materials like GaAs and GaSe. Engineers consider it when designing specialized detectors, modulators, or emitters for mid-infrared wavelengths where conventional semiconductors are either too lossy or too transparent.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.28 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 27.31 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.577 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.850 | eV | — | ||
| ↳ | 2.800 | eV | — | ||
| ↳ | 1.443 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.23 | - | — | ||
| ↳ | 12.59 | - | — | ||
| ↳ | 8.322 range 6.478–10.17median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7028 | C/m² | — | ||
Seebeck Coefficient(S) | -80.36 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000700 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.070 | eV/atom | — | ||
| ↳ | -0.7295 | eV/atom | — |