Ga2S3
semiconductor· Ga2S3
Gallium sulfide (Ga₂S₃) is a III–VI compound semiconductor belonging to the gallium chalcogenide family, characterized by a direct bandgap suitable for optoelectronic applications. While not yet widely deployed in commercial products, Ga₂S₃ is actively studied for infrared photonics, scintillation detection, and nonlinear optical devices because its bandgap and transparency window position it between more common materials like GaAs and GaSe. Engineers consider it when designing specialized detectors, modulators, or emitters for mid-infrared wavelengths where conventional semiconductors are either too lossy or too transparent.
infrared detectors and sensorsnonlinear optical devicesscintillation countersradiation detectionphotonic researchmid-infrared optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,697.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 3,961 | ksi | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1292 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.850 | eV | — | ||
| ↳ | 2.800 | eV | — | ||
| ↳ | 1.443 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.23 | - | — | ||
| ↳ | 12.59 | - | — | ||
| ↳ | 8.322 range 6.478–10.17median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7028 | C/m² | — | ||
Seebeck Coefficient(S) | -80.36 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000700 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.070 | eV/atom | — | ||
| ↳ | -0.7295 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.