Ga2HgSe4 — Properties & Data | MatWorld

Ga2HgSe4

Name: Ga2HgSe4
Brand: MatWorld

semiconductor

· Ga2HgSe4

Ga₂HgSe₄ is a quaternary semiconductor compound belonging to the family of mercury-containing chalcogenides, combining gallium, mercury, and selenium in a structured lattice. This material is primarily of research interest for infrared optics and nonlinear optical applications, where its wide bandgap and optical transparency in the infrared region make it a candidate for specialized photonic devices. While not yet widely deployed in mainstream industrial production, compounds in this material family are explored for potential use in tunable laser systems, frequency conversion, and thermal imaging components where conventional semiconductors reach their performance limits.

infrared opticsnonlinear optical devicesresearch photonicsfrequency conversionthermal imaging componentsexperimental semiconductors

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Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	4,576.2	ksi	DFT
↳	5,357.7	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	2,649.8	ksi	DFT
↳	3,061.7	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2133	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.950	eV	Measured
↳	0.8720	eV	DFT · OptB88vdW
↳	2.075	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	15.92	-	DFT · OptB88vdW
↳	14.14	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	10.26	-	DFT · OptB88vdW
↳	6.673	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1400	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.7300	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6477	C/m²	DFT · OptB88vdW
↳	0.07749	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000339	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00224	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-52.94	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	301.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	21.34	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4445	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2HgSe4

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