Ga2HgS4 — Properties & Data | MatWorld

Ga2HgS4

Name: Ga2HgS4
Brand: MatWorld

semiconductor

· Ga2HgS4

Ga₂HgS₄ is a quaternary semiconductor compound belonging to the family of mercury-containing chalcogenides, combining gallium, mercury, and sulfur in a specific stoichiometric ratio. This material is primarily of research and developmental interest rather than established in volume production, with potential applications in optoelectronic and photovoltaic devices where its bandgap and optical properties may offer advantages in infrared detection or specialized solar conversion. Engineers would consider this compound for niche applications requiring mercury-based semiconductors with improved stability or tunable electronic properties compared to binary or ternary alternatives, though practical implementation remains limited due to material maturity, mercury handling complexity, and competing technologies.

infrared photodetectorsexperimental optoelectronicssemiconductor researchphotovoltaic developmentmercury-based electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	42.04	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)	23.85	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	4.831	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.790	eV	Measured
↳	1.533	eV	DFT · OptB88vdW
↳	2.831	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	12.65	-	DFT · OptB88vdW
↳	12.24	-	DFT · PBE
↳	9.336 range 7.024–11.65median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.569	-	DFT · OptB88vdW
↳	5.493	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.2133	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.220	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6644	C/m²	DFT · OptB88vdW
↳	0.1388	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000415	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00201	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-66.35	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	361.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	6.670	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.5512	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2HgS4

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