Ga2HgS4
semiconductorGa₂HgS₄ is a quaternary semiconductor compound belonging to the family of mercury-containing chalcogenides, combining gallium, mercury, and sulfur in a specific stoichiometric ratio. This material is primarily of research and developmental interest rather than established in volume production, with potential applications in optoelectronic and photovoltaic devices where its bandgap and optical properties may offer advantages in infrared detection or specialized solar conversion. Engineers would consider this compound for niche applications requiring mercury-based semiconductors with improved stability or tunable electronic properties compared to binary or ternary alternatives, though practical implementation remains limited due to material maturity, mercury handling complexity, and competing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)3 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |