Ga2BiAs

ceramic

· JVASP-35727· Ga2BiAs

Ga₂BiAs is a ternary III-V semiconductor ceramic compound combining gallium, bismuth, and arsenic elements. This material belongs to the family of narrow-bandgap semiconductors and remains primarily in research and development phase, with potential applications in infrared optoelectronics and thermoelectric devices where bismuth incorporation can modify electronic and thermal transport properties compared to conventional binary GaAs.

Infrared detectors and emittersThermoelectric cooling devicesHigh-temperature semiconductor researchNarrow-bandgap optoelectronicsBismuth-doped III-V semiconductorsAdvanced materials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	46.09	GPa	—
Poisson's Ratio(ν)	0.2700	-	—
Shear Modulus(G)	25.23	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.224	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-43.24	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.07110	eV/atom	—
Formation Energy(ΔHf)	-0.09619	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2BiAs

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental