Ga2BiAs
ceramic· JVASP-35727· Ga2BiAs
Ga₂BiAs is a ternary III-V semiconductor ceramic compound combining gallium, bismuth, and arsenic elements. This material belongs to the family of narrow-bandgap semiconductors and remains primarily in research and development phase, with potential applications in infrared optoelectronics and thermoelectric devices where bismuth incorporation can modify electronic and thermal transport properties compared to conventional binary GaAs.
Infrared detectors and emittersThermoelectric cooling devicesHigh-temperature semiconductor researchNarrow-bandgap optoelectronicsBismuth-doped III-V semiconductorsAdvanced materials research
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | ksi | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.