Ga2BiAs — Properties & Data | MatWorld

Ga2BiAs

ceramic

· JVASP-35727· Ga2BiAs

Ga₂BiAs is a ternary III-V semiconductor ceramic compound combining gallium, bismuth, and arsenic elements. This material belongs to the family of narrow-bandgap semiconductors and remains primarily in research and development phase, with potential applications in infrared optoelectronics and thermoelectric devices where bismuth incorporation can modify electronic and thermal transport properties compared to conventional binary GaAs.

Infrared detectors and emittersThermoelectric cooling devicesHigh-temperature semiconductor researchNarrow-bandgap optoelectronicsBismuth-doped III-V semiconductorsAdvanced materials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	46.09	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2700	-	DFT · OptB88vdW
Shear Modulus(G)	25.23	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.224	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000616	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.0000614	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-43.24	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	13.62	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	5.840	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.07110	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.09619	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2BiAs

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental