Ga2 Pd1 I8

semiconductor

· Ga2 Pd1 I8

Ga₂Pd₁I₈ is an experimental semiconductor compound combining gallium, palladium, and iodine, belonging to the halide perovskite and mixed-metal iodide family. This material is primarily a research-phase compound under investigation for optoelectronic and photovoltaic applications, where its unique electronic structure and light-absorbing properties offer potential advantages over conventional semiconductors in niche device architectures. While not yet established in commercial production, compounds in this material family are being explored for next-generation solar cells, X-ray detectors, and quantum-confined photonic devices where tailored bandgap and charge-transport properties are critical.

experimental photovoltaic researchhalide perovskite devicesradiation detectionoptoelectronic prototypingthin-film semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	11.58	GPa	—
Shear Modulus(G)	6.327	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9986	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3870	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga2 Pd1 I8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control