Ga₂Pd₁I₈ is an experimental semiconductor compound combining gallium, palladium, and iodine, belonging to the halide perovskite and mixed-metal iodide family. This material is primarily a research-phase compound under investigation for optoelectronic and photovoltaic applications, where its unique electronic structure and light-absorbing properties offer potential advantages over conventional semiconductors in niche device architectures. While not yet established in commercial production, compounds in this material family are being explored for next-generation solar cells, X-ray detectors, and quantum-confined photonic devices where tailored bandgap and charge-transport properties are critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,679.2 | ksi | — | ||
Shear Modulus(G) | 917.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9986 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3870 | eV/atom | — |