Ga1As0.01P0.99
semiconductor· Ga1As0.01P0.99
Ga₁As₀.₀₁P₀.₉₉ is a III-V direct bandgap semiconductor alloy, a gallium arsenide phosphide compound where arsenic and phosphorus are mixed on the group-V sublattice. This material represents a heavily phosphorus-rich variant of the GaAsP family, tuning the bandgap to the red-to-infrared region of the spectrum. It is used primarily in optoelectronic devices requiring direct emission or detection in the visible-to-near-IR range, and offers lattice-matching advantages over pure GaAs for certain substrate configurations. Engineers select this composition when precise bandgap engineering and wavelength control are required without resorting to more complex or costly material systems.
light-emitting diodes (visible-IR)photodetectors and phototransistorslaser diodesoptoelectronic integrated circuitsfiber-optic communicationsspectroscopy and sensing
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.