Ga₁As₀.₀₁P₀.₉₉ is a III-V direct bandgap semiconductor alloy, a gallium arsenide phosphide compound where arsenic and phosphorus are mixed on the group-V sublattice. This material represents a heavily phosphorus-rich variant of the GaAsP family, tuning the bandgap to the red-to-infrared region of the spectrum. It is used primarily in optoelectronic devices requiring direct emission or detection in the visible-to-near-IR range, and offers lattice-matching advantages over pure GaAs for certain substrate configurations. Engineers select this composition when precise bandgap engineering and wavelength control are required without resorting to more complex or costly material systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.230 | eV | — |