Ga1 P1
semiconductor· Ga1 P1
Gallium phosphide (GaP) is a III-V compound semiconductor formed from gallium and phosphorus, characterized by a direct bandgap structure that makes it useful for optoelectronic applications. Historically significant in LED technology—particularly for red and yellow LEDs—GaP has been a workhorse material in indicator lights, display applications, and early-generation photonic devices. While newer materials like GaN now dominate high-brightness LED markets, GaP remains relevant in niche optoelectronic applications where its proven performance, cost-effectiveness, and established manufacturing processes provide engineering value.
LED indicators and low-brightness displaysOptoelectronic devicesPhotonic integrated circuitsVisible light emittersSemiconductor heterostructure researchPower electronics substrate applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.