Ga1 P1

semiconductor

· Ga1 P1

Gallium phosphide (GaP) is a III-V compound semiconductor formed from gallium and phosphorus, characterized by a direct bandgap structure that makes it useful for optoelectronic applications. Historically significant in LED technology—particularly for red and yellow LEDs—GaP has been a workhorse material in indicator lights, display applications, and early-generation photonic devices. While newer materials like GaN now dominate high-brightness LED markets, GaP remains relevant in niche optoelectronic applications where its proven performance, cost-effectiveness, and established manufacturing processes provide engineering value.

LED indicators and low-brightness displaysOptoelectronic devicesPhotonic integrated circuitsVisible light emittersSemiconductor heterostructure researchPower electronics substrate applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	10,973	ksi	—
Shear Modulus(G)	6,514.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00130	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.05800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 P1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control