Ga1 As1

semiconductor

· Ga1 As1

Gallium arsenide (GaAs) is a III-V compound semiconductor formed from gallium and arsenic, widely recognized for its direct bandgap properties that make it superior to silicon for optoelectronic applications. It is the material of choice for high-efficiency solar cells, laser diodes, LEDs, and integrated circuits operating at microwave and millimeter-wave frequencies, where its electron mobility and thermal stability outperform traditional silicon. Engineers select GaAs when direct light emission, high-frequency performance, or radiation hardness are critical requirements, though it is typically reserved for applications where its higher cost is justified by performance advantages.

photovoltaic cells and space solar panelslaser diodes and optoelectronicshigh-frequency integrated circuitsmicrowave and RF devicesLEDs and light-emitting applicationsradiation-hardened electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	61.93	GPa	—
Shear Modulus(G)	42.32	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7514	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3350	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ga1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control