Ga1 As1

Gallium arsenide (GaAs) is a III-V compound semiconductor formed from gallium and arsenic, widely recognized for its direct bandgap properties that make it superior to silicon for optoelectronic applications. It is the material of choice for high-efficiency solar cells, laser diodes, LEDs, and integrated circuits operating at microwave and millimeter-wave frequencies, where its electron mobility and thermal stability outperform traditional silicon. Engineers select GaAs when direct light emission, high-frequency performance, or radiation hardness are critical requirements, though it is typically reserved for applications where its higher cost is justified by performance advantages.