Ga1.002Sb0.998Te0.006
semiconductor· Ga1.002Sb0.998Te0.006
Ga₁.₀₀₂Sb₀.₉₉₈Te₀.₀₀₆ is a III-V semiconductor alloy based on gallium antimonide (GaSb) with trace tellurium doping, designed to engineer the bandgap and carrier properties for infrared and thermal detection applications. This near-stoichiometric composition represents a research-grade material optimized for mid-to-long wavelength infrared (MWIR/LWIR) sensing, where the tellurium incorporation provides defect compensation and improved carrier mobility compared to undoped GaSb. The material is used primarily in photodetector arrays, thermal imaging sensors, and military/space-based infrared systems where sensitivity in the 3–5 μm and 8–12 μm atmospheric windows is critical.
infrared photodetectorsthermal imaging sensorsMWIR/LWIR detectionspace and military opticsnarrow-bandgap semiconductorshigh-sensitivity IR focal planes
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.