Ga₁.₀₀₂Sb₀.₉₉₈Te₀.₀₀₆ is a III-V semiconductor alloy based on gallium antimonide (GaSb) with trace tellurium doping, designed to engineer the bandgap and carrier properties for infrared and thermal detection applications. This near-stoichiometric composition represents a research-grade material optimized for mid-to-long wavelength infrared (MWIR/LWIR) sensing, where the tellurium incorporation provides defect compensation and improved carrier mobility compared to undoped GaSb. The material is used primarily in photodetector arrays, thermal imaging sensors, and military/space-based infrared systems where sensitivity in the 3–5 μm and 8–12 μm atmospheric windows is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — |