Ga₁.₀₀₂Sb₀.₉₉₈Se₀.₀₀₆ is a III-V semiconductor alloy based on gallium antimonide (GaSb) with a small selenium dopant, engineered to tune bandgap and carrier properties for infrared and optoelectronic applications. This composition sits in the research/development space rather than high-volume production, targeting infrared detectors, thermal imaging systems, and mid-wavelength infrared (MWIR) sensors where GaSb substrates and near-stoichiometric variants are desirable for sensitivity and thermal stability. The selenium incorporation modifies lattice parameters and defect behavior compared to binary GaSb, making it relevant for specialized detector systems and heterojunction devices where precise bandgap engineering is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — |