Ga1.002Sb0.998Se0.006

semiconductor
· Ga1.002Sb0.998Se0.006

Ga₁.₀₀₂Sb₀.₉₉₈Se₀.₀₀₆ is a III-V semiconductor alloy based on gallium antimonide (GaSb) with a small selenium dopant, engineered to tune bandgap and carrier properties for infrared and optoelectronic applications. This composition sits in the research/development space rather than high-volume production, targeting infrared detectors, thermal imaging systems, and mid-wavelength infrared (MWIR) sensors where GaSb substrates and near-stoichiometric variants are desirable for sensitivity and thermal stability. The selenium incorporation modifies lattice parameters and defect behavior compared to binary GaSb, making it relevant for specialized detector systems and heterojunction devices where precise bandgap engineering is critical.

infrared detectorsthermal imaging sensorsmid-wavelength IR (MWIR) devicesoptoelectronic substratesheterojunction engineeringresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.