Ga0.7In0.3As

semiconductor
· Ga0.7In0.3As

Ga₀.₇In₀.₃As is a ternary III-V semiconductor alloy combining gallium arsenide and indium arsenide, engineered to achieve a specific bandgap and lattice parameter intermediate between its binary constituents. This material is primarily used in optoelectronic and high-frequency electronic devices, particularly in infrared photodetectors, laser diodes, and high electron mobility transistors (HEMTs) where its tailored bandgap enables detection or emission in the near-to-mid infrared spectrum. The 70/30 Ga/In ratio is selected for lattice compatibility with common substrates and to optimize carrier transport properties, making it preferred over binary compounds when a specific wavelength range or monolithic integration is required.

infrared photodetectorslaser diodes and emittershigh-frequency transistors (HEMT)fiber-optic communicationsintegrated photonicsthermal imaging sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.