Ga₀.₇In₀.₃As is a ternary III-V semiconductor alloy combining gallium arsenide and indium arsenide, engineered to achieve a specific bandgap and lattice parameter intermediate between its binary constituents. This material is primarily used in optoelectronic and high-frequency electronic devices, particularly in infrared photodetectors, laser diodes, and high electron mobility transistors (HEMTs) where its tailored bandgap enables detection or emission in the near-to-mid infrared spectrum. The 70/30 Ga/In ratio is selected for lattice compatibility with common substrates and to optimize carrier transport properties, making it preferred over binary compounds when a specific wavelength range or monolithic integration is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.000 | eV | — |