FeAsS is an iron arsenide sulfide compound belonging to the semiconductor family, combining iron with arsenic and sulfur elements. This material is of significant research interest in the context of iron-based superconductors and optoelectronic devices, where layered iron pnictide/chalcogenide structures show potential for high-performance applications. While not yet widely deployed in mainstream industrial production, FeAsS and related iron-based compounds represent an alternative platform to traditional semiconductors for specialized applications requiring unusual electronic or magnetic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,702.2 | ksi | — | ||
Shear Modulus(G) | 16,959.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2228 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4000 | eV | — | ||
| ↳ | 0.6580 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -414.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5119 | eV/atom | — |