CoAsS is a ternary semiconductor compound composed of cobalt, arsenic, and sulfur, belonging to the family of metal chalcogenide semiconductors. This material is primarily of research and developmental interest for next-generation optoelectronic and photovoltaic applications, where its tunable bandgap and potential for efficient charge carrier transport make it an alternative to conventional binary semiconductors. CoAsS systems are being investigated for thin-film solar cells, photodetectors, and light-emitting devices, offering potential advantages in cost, abundance, or performance over established III-V or II-VI semiconductors, though industrial deployment remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 139.0 | GPa | DFT | ||
| ↳ | 130.7 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 104.4 | GPa | DFT | ||
| ↳ | 80.76 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.098 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.6000 | eV | Measured | ||
| ↳ | 0.8180 | eV | DFT · OptB88vdW | ||
| ↳ | 0.7930 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 29.84 | - | DFT · OptB88vdW | ||
| ↳ | 27.30 range 23.57–31.02median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 24.55 | - | DFT · OptB88vdW | ||
| ↳ | 33.79 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 2.710 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.9400 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.02578 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.07114 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00272 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00233 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -443.2 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 374.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 26.22 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000400 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4919 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data