CdTe
semiconductorCadmium telluride (CdTe) is a II-VI compound semiconductor with a zinc-blende crystal structure, widely recognized as a direct-bandgap material suitable for optoelectronic and photovoltaic applications. It is a primary material for thin-film solar cells and X-ray/gamma-ray detectors due to its favorable band gap and high atomic number, offering superior light absorption and radiation sensitivity compared to silicon-based alternatives. CdTe's established industrial presence in utility-scale photovoltaic manufacturing and medical imaging systems makes it a proven choice where efficiency, compactness, and radiation detection capability are critical; however, its toxicity and cadmium content impose strict handling and regulatory considerations that engineers must account for in design and deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | — | |
Elastic Anisotropy(AU) | — | - | — | — | |
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | — | |
Poisson's Ratio(ν)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Shear Modulus(G)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | — | W/(m·K) | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)3 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |