Cadmium telluride (CdTe) is a II-VI compound semiconductor with a zinc-blende crystal structure, widely recognized as a direct-bandgap material suitable for optoelectronic and photovoltaic applications. It is a primary material for thin-film solar cells and X-ray/gamma-ray detectors due to its favorable band gap and high atomic number, offering superior light absorption and radiation sensitivity compared to silicon-based alternatives. CdTe's established industrial presence in utility-scale photovoltaic manufacturing and medical imaging systems makes it a proven choice where efficiency, compactness, and radiation detection capability are critical; however, its toxicity and cadmium content impose strict handling and regulatory considerations that engineers must account for in design and deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 5,077.3 | ksi | DFT | ||
| ↳ | 5,476.6 | ksi | DFT · OptB88vdW | ||
| ↳ | 5,121.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.7988 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.3500 | - | DFT · OptB88vdW | ||
| ↳ | 0.3299 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 1,903.9 | ksi | DFT | ||
| ↳ | 1,811.5 | ksi | DFT · OptB88vdW | ||
| ↳ | 1,964.9 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 3.854 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2018 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.500 | eV | Measured | ||
| ↳ | 0.4980 | eV | DFT · OptB88vdW | ||
| ↳ | 1.640 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 14.82 | - | DFT · OptB88vdW | ||
| ↳ | 12.44 | - | DFT · PBE | ||
| ↳ | 10.03 range 8.683–11.37median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 13.52 | - | DFT · OptB88vdW | ||
| ↳ | 6.546 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.09000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.7700 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7497 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.00485 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000167 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00298 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -32.16 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 275.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 30.38 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00480 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.4042 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.5224 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data