CdInS2 is a ternary semiconductor ceramic compound combining cadmium, indium, and sulfur in a chalcopyrite crystal structure. It is primarily a research material investigated for optoelectronic and photovoltaic applications, particularly in thin-film solar cells and photodetectors operating in the visible-to-near-infrared spectrum. Engineers consider CdInS2 as an alternative to binary semiconductors (like CdS or InP) when seeking tunable bandgap properties and improved light absorption efficiency, though commercial adoption remains limited compared to established III-V semiconductors and perovskite compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.86 | GPa | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 26.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.494 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4530 range 0.000–0.9060median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 3.363 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1491 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4781 | eV/atom | — |