CdGeP2 — Properties & Data | MatWorld

CdGeP2

Name: CdGeP2
Brand: MatWorld

semiconductor

· CdGeP2

CdGeP2 is a III-V ternary semiconductor compound belonging to the chalcopyrite family, combining cadmium, germanium, and phosphorus into a direct bandgap material. It is primarily investigated for infrared optoelectronic applications, particularly in the 1–3 μm wavelength range, where its tunable bandgap and strong nonlinear optical properties make it attractive for laser systems and infrared detectors. While not widely commercialized relative to binary semiconductors like GaAs or InP, CdGeP2 remains an active research material for specialized applications requiring efficient infrared emission or detection in compact device architectures.

infrared detectorsnonlinear opticslaser systemsmid-wave IR applicationsquantum well researchoptoelectronic device development

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Units:

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	65.24	GPa	DFT
↳	65.37	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2800	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	35.00	GPa	DFT
↳	36.38	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	4.431	kg/m³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.650	eV	Measured
↳	0.4820	eV	DFT · OptB88vdW
↳	1.646	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	19.08	-	DFT · OptB88vdW
↳	16.12	-	DFT · PBE
↳	14.89 range 13.77–16.01median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.187	-	DFT · TBmBJ
↳	15.58	-	DFT · OptB88vdW
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.07667	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.4800	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.8239	C/m²	DFT · OptB88vdW
↳	0.00861	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00116	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00232	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-95.01	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	223.3	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.24	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.1020	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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CdGeP2

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